The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Dec. 22, 2009
Yuki Nakamura, Kanagawa, JP;
Koji Shirai, Kanagawa, JP;
Hirofumi Nagano, Kanagawa, JP;
Jun Morioka, Kanagawa, JP;
Tsubasa Yamada, Kanagawa, JP;
Kazuaki Yamaura, Kanagawa, JP;
Yasunori Iwatsu, Kanagawa, JP;
Yuki Nakamura, Kanagawa, JP;
Koji Shirai, Kanagawa, JP;
Hirofumi Nagano, Kanagawa, JP;
Jun Morioka, Kanagawa, JP;
Tsubasa Yamada, Kanagawa, JP;
Kazuaki Yamaura, Kanagawa, JP;
Yasunori Iwatsu, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a diode formed by making use of a DMOS transistor structure. In addition to such a DMOS transistor structure, the semiconductor device includes a second buried layer of the first conductivity type being provided on a first buried layer of a second conductivity type that is in a floating state. Moreover, the second buried layer of the first conductivity type and a second diffusion region of the first conductive type are connected by a first diffusion region of the first conductivity type. A first electrode is set as anode, and a second electrode and a third electrode are short-circuited and set as cathode.