The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Jun. 29, 2011
Friedhelm Bauer, Semione, CH;
Friedhelm Bauer, Semione, CH;
ABB Research Ltd, Zürich, CH;
Abstract
A bipolar power semiconductor device is provided with an emitter electrode on an emitter side and a collector electrode on a collector side. The device has a trench gate electrode and a structure with a plurality of layers of different conductivity types in the following order: at least one n doped source region, a p doped base layer, which surrounds the at least one source region, an n doped enhancement layer, a p doped additional well layer, an additional n doped enhancement layer, an additional p doped well layer, an n doped drift layer and a p doped collector layer. The trench gate electrode has a gate bottom, which is located closer to the collector side than the additional enhancement layer bottom.