The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Mar. 04, 2009
Applicant:
Naiqian Zhang, Xi′an, CN;
Inventor:
Naiqian Zhang, Xi′an, CN;
Assignee:
Dynax Semiconductor, Inc., Xi'an, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
A HEMT device and a manufacturing of the HEMT device, the HEMT device includes: a buffer layer () on the substrate (); a semiconductor layer on the buffer layer (); an isolation layer () on the semiconductor layer; a source electrode () and a drain electrode () contacted with the semiconductor layer; and a gate electrode () between the source electrode () and the drain electrode (); wherein, a channel, which is located in the semiconductor layer below the gate electrode (), is pinched off.