The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Jun. 23, 2011
Applicants:
Mitsuaki Oya, Aichi, JP;
Toshiya Yokogawa, Nara, JP;
Atsushi Yamada, Osaka, JP;
Akihiro Isozaki, Osaka, JP;
Inventors:
Mitsuaki Oya, Aichi, JP;
Toshiya Yokogawa, Nara, JP;
Atsushi Yamada, Osaka, JP;
Akihiro Isozaki, Osaka, JP;
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract
A nitride-based semiconductor light-emitting deviceincludes: a GaN substratewith an m-plane surface; a semiconductor multilayer structureprovided on the m-plane surfaceof the GaN substrate; and an electrodeprovided on the semiconductor multilayer structure. The electrodeincludes a Zn layerand an Ag layerprovided on the Zn layer. The Zn layeris in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure