The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Jun. 19, 2007
Tan Sakong, Yongin-si, KR;
Joong-kon Son, Yongin-si, KR;
Ho-sun Paek, Yongin-si, KR;
Sung-nam Lee, Yongin-si, KR;
Tan Sakong, Yongin-si, KR;
Joong-kon Son, Yongin-si, KR;
Ho-sun Paek, Yongin-si, KR;
Sung-nam Lee, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A nitride-based semiconductor light emitting device having a structure capable of improving optical output performance, and methods of manufacturing the same are provided. The active layer may include a first barrier layer formed of InGaN (0.01≦x≦0.05) on a n-type semiconductor layer, a first diffusion barrier layer formed of InGaN (0≦y<0.01) on the first barrier layer, and doped with an anti-defect agent including at least one of an N (nitrogen) element and a Si (silicon) element, a quantum well layer formed of InGaN (0.25≦z≦0.35) on the first diffusion barrier layer, a second diffusion barrier layer formed of InGaN (0≦y<0.01) on the quantum well layer, and doped with an anti-defect agent including at least one of an N element and a Si element, and a second barrier layer formed of InGaN (0.01≦x≦0.05) on the second diffusion barrier layer. The nitride-based semiconductor light emitting device may include an n-type semiconductor layer, the active layer, and a p-type semiconductor layer that are sequentially stacked on a substrate.