The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Jun. 07, 2010
Applicants:
Chung-ying Chang, Hsinchu, TW;
Wen-jia Huang, Hsinchu, TW;
Chao-hsu Lai, Hsinchu, TW;
Tien Kun Lin, Hsinchu, TW;
Inventors:
Chung-Ying Chang, Hsinchu, TW;
Wen-Jia Huang, Hsinchu, TW;
Chao-Hsu Lai, Hsinchu, TW;
Tien Kun Lin, Hsinchu, TW;
Assignee:
Epistar Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
Abstract
A light-emitting device having a light-emitting epitaxy structure. The light-emitting epitaxy structure has a modulus of a critical reverse voltage not less than 50 volts, while the light-emitting epitaxy structure is reverse-biased at a current density of −10 μA/mm, and has a luminous efficiency not less than 50 lumen/Watt, while the light-emitting epitaxy structure is forward-biased at a current density of 150 mA/mm.