The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Nov. 27, 2008
Applicant:
Mikio Shimada, Kawasaki, JP;
Inventor:
Mikio Shimada, Kawasaki, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
Abstract
A transistor includes a gate electrode, a gate insulating layer, a semiconductor layer including an amorphous oxide, source-drain electrodes, and a protective layer on a substrate. The semiconductor layer includes a first region corresponding to a region in which the source-drain electrodes are formed, and a second region not corresponding to the region in which the source-drain electrodes are formed. At least the first region includes a crystalline component having a composition different from the composition of the amorphous oxide in the second region.