The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Mar. 18, 2010
Applicant:
Masahiro Tamura, Mobara, JP;
Inventor:
Masahiro Tamura, Mobara, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a crystalline silicon thin film semiconductor device which is capable of reducing off-state leakage current and has excellent current rising characteristics. The thin film transistor includes a semiconductor layer formed of an amorphous silicon layer and a crystalline silicon layer. A drain electrode is provided in direct contact with the crystalline silicon layer of the semiconductor layer, to thereby improve the current rising characteristics.