The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Feb. 19, 2010
Junichi Hashimoto, Mie-ken, JP;
Junichi Hashimoto, Mie-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device manufacturing method includes: stacking a plurality of electrode layers containing a semiconductor alternately with insulating layers; processing part of a multilayer body of the electrode layers and the insulating layers into a staircase shape and exposing a surface of the staircase-shaped electrode layers; forming a metal film in contact with the exposed electrode layers; reacting the semiconductor of the electrode layers with the metal film to form a metal compound in at least a portion of the electrode layers in contact with the metal film; removing an unreacted portion of the metal film; forming an interlayer insulating layer covering the staircase-shaped electrode layers after removing the unreacted portion of the metal film; forming a plurality of contact holes piercing the interlayer insulating layer, each of the contact holes reaching the metal compound of the electrode layer at a corresponding stage; and providing a plurality of contact electrodes inside the contact holes.