The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Feb. 05, 2008
Karl E. Boggs, Hopewell Junction, NY (US);
Michael S. Darsillo, Landenberg, PA (US);
Peter Wrschka, Phoenix, AZ (US);
James Welch, Clayton, NC (US);
Karl E. Boggs, Hopewell Junction, NY (US);
Michael S. Darsillo, Landenberg, PA (US);
Peter Wrschka, Phoenix, AZ (US);
James Welch, Clayton, NC (US);
Advanced Technology Materials, Inc., Danbury, CT (US);
Abstract
A chemical mechanical polishing process including a single copper removal CMP slurry formulation for planarization of a microelectronic device structure preferably having copper deposited thereon. The process includes the bulk removal of a copper layer using a first CMP slurry formulation having oxidizing agent, passivating agent, abrasive and solvent, and the soft polishing and over-polishing of the microelectronic device structure using a formulation including the first CMP slurry formulation and at least one additional additive. The CMP process described herein provides a high copper removal rate, a comparatively low barrier material removal rate, appropriate material selectivity ranges to minimize copper dishing at the onset of barrier material exposure, and good planarization efficiency.