The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Oct. 23, 2009
Chaehwan Jeong, Gwangju, KR;
Jong Ho Lee, Gwangju, KR;
Ho-sung Kim, Gwangju, KR;
Seongjae Boo, Gwangju, KR;
Chaehwan Jeong, Gwangju, KR;
Jong Ho Lee, Gwangju, KR;
Ho-Sung Kim, Gwangju, KR;
Seongjae Boo, Gwangju, KR;
Abstract
A method for fabricating a solar cell using inductively coupled plasma chemical vapor deposition (ICP-CVD) including a first electrode, a P layer, an intrinsic layer, an N-type layer and a second electrode. The method includes forming an intrinsic layer including a hydrogenated amorphous silicon (Si) thin film by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H) gas and silane (SiH) gas. In the mixed gas, silane gas is in a ratio of 8 to 10 relative to mixed gas.