The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Sep. 23, 2011
Yong-hoon Son, Gyeonggi-do, KR;
Si-young Choi, Gyeonggi-do, KR;
Byeong-chan Lee, Gyeonggi-do, KR;
Deok-hyung Lee, Gyeonggi-do, KR;
In-soo Jung, Gyeonggi-do, KR;
Yong-Hoon Son, Gyeonggi-do, KR;
Si-Young Choi, Gyeonggi-do, KR;
Byeong-Chan Lee, Gyeonggi-do, KR;
Deok-Hyung Lee, Gyeonggi-do, KR;
In-Soo Jung, Gyeonggi-do, KR;
Abstract
Methods of fabricating metal-oxide-semiconductor (MOS) transistors having elevated source/drain regions are provided. The MOS transistors formed by these methods may include a gate pattern formed to cross over a predetermined region of a substrate. Recessed regions are provided in the substrate adjacent to the gate pattern. Epitaxial layers are provided on bottom surfaces of the recessed regions. High concentration impurity regions are provided in the epitaxial layers. The recessed regions may be formed using a chemical dry etching techniques.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile