The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Dec. 20, 2007
Florin Udrea, Cambridge, GB;
Gehan Anil Joseph Amaratunga, Cambridge, GB;
Tanya Trajkovic, Cambridge, GB;
Vasantha Pathirana, Cambridge, GB;
Florin Udrea, Cambridge, GB;
Gehan Anil Joseph Amaratunga, Cambridge, GB;
Tanya Trajkovic, Cambridge, GB;
Vasantha Pathirana, Cambridge, GB;
Cambridge Semiconductor Limited, Cambridge, GB;
Abstract
In a power semiconductor device and a method of forming a power semiconductor device, a thin layer of semiconductor substrate is left below the drift region of a semiconductor device. A power semiconductor device has an active region that includes the drift region and has top and bottom surfaces formed in a layer provided on a semiconductor substrate. A portion of the semiconductor substrate below the active region is removed to leave a thin layer of semiconductor substrate below the drift region. Electrical terminals are provided directly or indirectly to the top surface of the active region to allow a voltage to be applied laterally across the drift region.