The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Sep. 24, 2008
Jeffrey Pearse, Chandler, AZ (US);
Prasad Venkatraman, Gilbert, AZ (US);
James Sellers, Chandler, AZ (US);
Hemanshu D. Bhatt, Bangalore, IN;
Jeffrey Pearse, Chandler, AZ (US);
Prasad Venkatraman, Gilbert, AZ (US);
James Sellers, Chandler, AZ (US);
Hemanshu D. Bhatt, Bangalore, IN;
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Abstract
In one embodiment, a method of forming an MOS transistor includes forming the MOS transistor to have an active region and a termination region. Within the termination region the method includes forming a plurality of trenches having a conductor within the plurality of trenches. The method also includes forming another conductor to make electrical contact to one of the conductors within the plurality of trenches.