The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
May. 15, 2008
Masato Ofuji, Kawasaki, JP;
Katsumi Abe, Kawasaki, JP;
Ryo Hayashi, Yokohama, JP;
Masafumi Sano, Yokohama, JP;
Hideya Kumomi, Tokyo, JP;
Masato Ofuji, Kawasaki, JP;
Katsumi Abe, Kawasaki, JP;
Ryo Hayashi, Yokohama, JP;
Masafumi Sano, Yokohama, JP;
Hideya Kumomi, Tokyo, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
To provide an enhancement-depletion (E/D) inverter which can be easily manufactured, in the present invention, a method of manufacturing an inverter which is composed of an oxide semiconductor in which a channel layer includes at least one element selected from In, Ga and Zn formed on a same substrate, the inverter being the E/D inverter having plural thin film transistors, is characterized by comprising the steps of: forming a first transistor and a second transistor, the thicknesses of the channel layers of the first and second transistors being mutually different; and executing heat treatment to at least one of the channel layers of the first and second transistors.