The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Oct. 14, 2010
Hiroaki Naruse, Yokohama, JP;
Takashi Okagawa, Sagamihara, JP;
Ryuichi Mishima, Machida, JP;
Nobuhiko Sato, Yokohama, JP;
Hiroshi Yuzurihara, Atsugi, JP;
Hiroaki Naruse, Yokohama, JP;
Takashi Okagawa, Sagamihara, JP;
Ryuichi Mishima, Machida, JP;
Nobuhiko Sato, Yokohama, JP;
Hiroshi Yuzurihara, Atsugi, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.