The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Feb. 10, 2011
Solomon Assefa, Ossining, NY (US);
Jeehwan Kim, White Plains, NY (US);
Jin-hong Park, Fishkill, NY (US);
Yurii A. Vlasov, Katonah, NY (US);
Solomon Assefa, Ossining, NY (US);
Jeehwan Kim, White Plains, NY (US);
Jin-Hong Park, Fishkill, NY (US);
Yurii A. Vlasov, Katonah, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, implanting n-type ions in the Ge layer, patterning the n-type Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline n-type Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.