The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Nov. 29, 2010
Chih-he Lin, Beigang Township, Yunlin County, TW;
Shyh-shyuan Sheu, Zhubei, TW;
Wen-pin Lin, Dacun Township, Changhua County, TW;
Pei-chia Chiang, Taipei, TW;
Chih-He Lin, Beigang Township, Yunlin County, TW;
Shyh-Shyuan Sheu, Zhubei, TW;
Wen-Pin Lin, Dacun Township, Changhua County, TW;
Pei-Chia Chiang, Taipei, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A resistive random access memory (RRAM) and a verifying method thereof are provided. The RRAM comprises at least one resistive memory cell. The resistive memory cell comprises a resistive memory element and a transistor, wherein one terminal of the resistive memory element is coupled to a first terminal of the transistor. The verifying method comprises the following steps: Whether the resistive memory cell passes verification is determined. During a first time period and under the circumstance that the resistive memory cell fails to pass verification, a reference voltage is applied to the other terminal of the resistive memory element and a voltage pulse is applied to a second terminal of the transistor according to a voltage signal to write a reverse voltage to the resistive memory cell.