The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Mar. 24, 2009
Masayuki Terai, Tokyo, JP;
Masayuki Terai, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor storage device is provided for solving the problem of the inability to simultaneously realize high reliability and decreased cell area. A selection electrode () is formed to sandwich an insulating film () with a p-type semiconductor region (). A first n-type semiconductor region () and a second n-type semiconductor region () are formed in the p-type semiconductor region () at two sides of the selection electrode (). A first resistance-changing layer () is connected to the first n-type semiconductor region (), and a second resistance-changing layer () is connected to the second n-type semiconductor region (). In addition, a first wiring layer () is connected to the second resistance-changing layer (), and a second wiring layer () is connected to the second resistance-changing layer ().