The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2012

Filed:

Apr. 17, 2009
Applicants:

Nobuyuki Kawakami, Kobe, JP;

Mototaka Ochi, Kobe, JP;

Aya Miki, Kobe, JP;

Shinya Morita, Kobe, JP;

Yoshihiro Yokota, Kobe, JP;

Shinya Fukuma, Kobe, JP;

Hiroshi Goto, Kobe, JP;

Inventors:

Nobuyuki Kawakami, Kobe, JP;

Mototaka Ochi, Kobe, JP;

Aya Miki, Kobe, JP;

Shinya Morita, Kobe, JP;

Yoshihiro Yokota, Kobe, JP;

Shinya Fukuma, Kobe, JP;

Hiroshi Goto, Kobe, JP;

Assignee:

Kobe Steel, Ltd., Kobe-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

An interconnection structure, containing a substrate and, in the following order from a side of the substrate: (I) a semiconductor layer; (II) a multilayer structure including (II-a) a first layer containing at least one type of an element selected from the group consisting of nitrogen, carbon and fluorine and (II-b) an Al—Si diffusion layer containing Al and Si; and (III) an Al film of pure Al or an Al alloy, wherein the at least one of element selected from the group consisting of nitrogen, carbon, and fluorine in the first layer is bonded with Si contained in the semiconductor layer.


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