The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Mar. 03, 2011
Hiroyuki Nakamura, Kanagawa, JP;
Atsushi Fujiki, Kanagawa, JP;
Tatsuhiro Seki, Kanagawa, JP;
Nobuya Koike, Kanagawa, JP;
Yukihiro Sato, Kanagawa, JP;
Kisho Ashida, Hitachinaka, JP;
Hiroyuki Nakamura, Kanagawa, JP;
Atsushi Fujiki, Kanagawa, JP;
Tatsuhiro Seki, Kanagawa, JP;
Nobuya Koike, Kanagawa, JP;
Yukihiro Sato, Kanagawa, JP;
Kisho Ashida, Hitachinaka, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
To improve the performance and reliability of semiconductor devices. For the semiconductor chip CP, power MOSFETs Qand Qfor the switch, a diode DDfor detecting the heat generation of the power MOSFET Q, a diode DDfor detecting the heat generation of the power MOSFET Q, and plural pad electrodes PD are formed. The power MOSFET Qand the diode DDare arranged in a first MOSFET region RGon the side of a side SD, and the power MOSFET Qand the diode DDare arranged in a second MOSFET region RGon the side of a side SD. The diode DDis arranged along the side SD, the diode DDis arranged along the side SD, and all pad electrodes PD other than the pad electrodes PDSand PDSfor the source are arranged along a side SDbetween the diodes DDand DD