The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Nov. 23, 2010
Jochen Reinmuth, Reutlingen, DE;
Peter Schmollngruber, Aidlingen, DE;
Hans Artmann, Boeblingen-Dagersheim, DE;
Jochen Reinmuth, Reutlingen, DE;
Peter Schmollngruber, Aidlingen, DE;
Hans Artmann, Boeblingen-Dagersheim, DE;
Robert Bosch GmbH, Stuttgart, DE;
Abstract
A layer structure for the electrical contacting of a semiconductor component having integrated circuit elements and integrated connecting lines for the circuit elements, which is suitable in particular for use in a chemically aggressive environment and at high temperatures, i.e., in so-called 'harsh environments,' and is simple to implement. This layer structure includes at least one noble metal layer, in which at least one bonding island is formed, the noble metal layer being electrically insulated from the substrate of the semiconductor component by at least one dielectric layer, and having at least one ohmic contact between the noble metal layer and an integrated connecting line. The noble metal layer is applied directly on the ohmic contact layer.