The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Mar. 17, 2011
Kanako Komatsu, Kanagawa-ken, JP;
Tsubasa Yamada, Kanagawa-ken, JP;
Jun Morioka, Kanagawa-ken, JP;
Koji Kimura, Kanagawa-ken, JP;
Kanako Komatsu, Kanagawa-ken, JP;
Tsubasa Yamada, Kanagawa-ken, JP;
Jun Morioka, Kanagawa-ken, JP;
Koji Kimura, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include simultaneously forming a first field insulating film and at least one second field insulating film on a front face side of a semiconductor layer. The at least one second field insulating film is separated from the first field insulating film and thinner than the first field insulating film. The method can include forming a drift region of a first conductivity type in a region of the semiconductor layer including the first field insulating film and the second field insulating film. The method can include forming a drain region of the first conductivity type in the front face of the semiconductor layer on a side of the first field insulating film. In addition, the method can include forming a source region of the first conductivity type in the front face of the semiconductor layer on a side of the second field insulating film.