The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Aug. 20, 2009
Suk-pil Kim, Gyeonggi-do, KR;
Yoon-dong Park, Gyeonggi-do, KR;
Jae-young Choi, Gyeonggi-do, KR;
June-mo Koo, Seoul, KR;
Byung-hee Hong, Gyeonggi-do, KR;
Suk-pil Kim, Gyeonggi-do, KR;
Yoon-dong Park, Gyeonggi-do, KR;
Jae-young Choi, Gyeonggi-do, KR;
June-mo Koo, Seoul, KR;
Byung-hee Hong, Gyeonggi-do, KR;
Abstract
According to some embodiments, a semiconductor device includes first and second auxiliary gate electrodes and a semiconductor layer crossing the first and second auxiliary gate electrodes. A primary gate electrode is provided on the semiconductor layer so that the semiconductor layer is between the primary gate electrode and the first and second auxiliary gate electrodes. Moreover, the first and second auxiliary gate electrodes are configured to induce respective first and second field effect type source/drain regions in the semiconductor layer. Related methods are also discussed.