The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Jul. 05, 2011
Applicant:
Seisei Oyamada, Tokyo, JP;
Inventor:
Seisei Oyamada, Tokyo, JP;
Assignee:
Liquid Design Systems Inc., Yokohama, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes an Si substrate having a first surface provided with semiconductor elements, such as a CMOS transistor and a diode, and a second surface opposite to the first surface. On one of the first and the second surfaces, a bypass capacitor is formed. The bypass capacitor includes a Vcc power supply layer and a GND layer which serve to supply a power supply voltage to the semiconductor element, and a high dielectric constant layer sandwiched between the Vcc power supply layer and the GND layer.