The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2012

Filed:

Feb. 01, 2010
Applicants:

Shou-cheng Weng, Changhua, TW;

Huai-an LI, Zhongli, TW;

Chi-neng MO, Zhongli, TW;

Inventors:

Shou-cheng Weng, Changhua, TW;

Huai-an Li, Zhongli, TW;

Chi-neng Mo, Zhongli, TW;

Assignee:

Chunghwa Picture Tubes, Ltd., Bade City, Taoyuan, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
Abstract

A vertical thin film transistor and a method for manufacturing the same and a display device including the vertical thin film transistor and a method for manufacturing the same are disclosed. The vertical thin film transistor is applied to a substrate. In the present invention, a gate layer of the vertical thin film transistor is formed to have a plurality of concentric annular structures and the adjacent concentric annular structures are linked. By the concentric annular structures of the gate electrode layer, resistance to stress and an on-state current of the vertical thin film transistor can be increased.


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