The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Oct. 25, 2011
Cancheepuram V. Srividya, Boise, ID (US);
Noel Rocklein, Boise, ID (US);
John Vernon, Boise, ID (US);
Jeff Nelson, Boise, ID (US);
F. Daniel Gealy, Boise, ID (US);
David Korn, Boise, ID (US);
Cancheepuram V. Srividya, Boise, ID (US);
Noel Rocklein, Boise, ID (US);
John Vernon, Boise, ID (US);
Jeff Nelson, Boise, ID (US);
F. Daniel Gealy, Boise, ID (US);
David Korn, Boise, ID (US);
Round Rock Research, LLC, Mt. Kisco, NY (US);
Abstract
The invention includes a dielectric mode from ALD-type methods in which two or more different precursors are utilized with one or more reactants to form the dielectric material. In particular aspects, the precursors are aluminum and hafnium and/or zirconium for materials made from a hafnium precursor, the hafnium oxide is predominantly in a tetragonal crystalline phase.