The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Nov. 02, 2006
Takashi Udagawa, Chichibu, JP;
Takashi Udagawa, Chichibu, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
A semiconductor light-emitting diodeis provided with a silicon single crystal substrate, an intervening layerformed of a Group III nitride semiconductor and stacked on the silicon single crystal substrate, and a light-emitting part () formed with a p-n-junction hetero-junction structure and stacked on the intervening layer. The intervening layeris formed of an aluminum-containing Group III nitride semiconductor. The intervening layerand the light-emitting part () have interposed therebetween a superlattice structureformed of a plurality of Group III nitride semiconductor layers that contain aluminum and have mutually different aluminum composition ratios. A DBR film formed of the superlattice structureis enabled to excel in reflectance and enhance the light-emitting property.