The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2012

Filed:

Mar. 08, 2011
Applicants:

Alexandre Vaufredaz, La Murette, FR;

Sebastien Molinari, Sassenage, FR;

Inventors:

Alexandre Vaufredaz, La Murette, FR;

Sebastien Molinari, Sassenage, FR;

Assignee:

Soitec, Bernin, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/46 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention relates to a process for fabricating a multilayer structure comprising: bonding a first wafer onto a second wafer, at least the first wafer having a chamfered edge; and thinning the first wafer so as to form in a transferred layer, the thinning comprising a grinding step and a chemical etching step. After the grinding step and before the chemical etching step, a trimming step of the edge of the first wafer is carried out using a grinding wheel, the working surface of which comprises grit particles having an average size of less than or equal to 800-mesh or greater than or equal to 18 microns, the trimming step being carried out to a defined depth in the first wafer so as to leave a thickness of the first wafer of less than or equal to 35 μm in the trimmed region.


Find Patent Forward Citations

Loading…