The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Mar. 26, 2010
Sang-don Nam, Seoul, KR;
Sang-hoon Ahn, Hwaseong-si, KR;
Eunkee Hong, Seongnam-si, KR;
Abstract
Provided is a method for fabricating a semiconductor device, including forming an interconnect structure including first and second interconnects and an insulating material between the first and second interconnects, forming a first mask layer and a second mask layer having a plurality of micropores sequentially on the interconnect structure, coalescing the plurality of micropores in the second mask layer with each other and forming a plurality of first microholes in the second mask layer, forming a plurality of second microholes in the first mask layer using the plurality of first microholes, and removing the insulating material using the first mask layer with the plurality of second microholes as an etch mask so as to form an air-gap between the first and second interconnects.