The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Jul. 29, 2009
Applicants:
Kerry Bernstein, Underhill, VT (US);
Francis Roger White, Essex Junction, VT (US);
Inventors:
Kerry Bernstein, Underhill, VT (US);
Francis Roger White, Essex Junction, VT (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A trench decoupling capacitor is formed using RIE lag of a through silicon via (TSV) etch. A method includes etching a via trench and a capacitor trench in a wafer in a single RIE process. The via trench has a first depth and the capacitor trench has a second depth less than the first depth due to RIE lag.
Bernstein, Kerry. (2012). Trench decoupling capacitor formed by rie lag of through silicon via (tsv) etch (U.S. Patent No. 8298906). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8298906
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile