The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Dec. 08, 2010
Hiromichi Ichikawa, Kawasaki, JP;
Hiromichi Ichikawa, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A method of manufacturing a semiconductor device, includes forming a gate insulating film and a gate electrode on a semiconductor substrate of a first conductivity type; forming a first drain region by implanting at a first predetermined dosage a first impurity of a second conductivity type corresponding to an opposite conductivity type with respect to the first conductivity type at a region of the semiconductor substrate in the vicinity of an end portion of the gate electrode; forming a second drain region substantially within the first drain region by implanting a second impurity of the second conductivity type at a second dosage that is greater than the first dosage; and forming a drain contact region within the second drain region by implanting a third impurity of the second conductivity type at a third dosage that is greater than the second dosage.