The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Jul. 08, 2008
Hiroyuki Tomomatsu, Oita, JP;
Akihiro Sugihara, Oita, JP;
Motoaki Kusamaki, Oita, JP;
Tohru Kato, Tokyo, JP;
Hiroyuki Tomomatsu, Oita, JP;
Akihiro Sugihara, Oita, JP;
Motoaki Kusamaki, Oita, JP;
Tohru Kato, Tokyo, JP;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The objective of this invention is to provide a type of photodiode and the method of manufacturing the photodiode characterized by the fact that it has a higher photoelectric conversion efficiency (sensitivity) than that in the prior art. PIN photodiodehas a p-type silicon substrate, p-type silicon layer, n-type silicon layerformed on p-type silicon layerand having a junction plane with silicon layer, n-type low-resistance silicon regionthat is formed to a prescribed depth from the surface of silicon layerand has an impurity concentration higher than that of silicon layer, silicon oxide filmformed on silicon region, and silicon nitride filmformed on silicon oxide film