The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Oct. 28, 2008
Changsung Sean Kim, Gyunggi-do, KR;
Sang Duk Yoo, Gyunggi-do, KR;
Jong PA Hong, Gyunggi-do, KR;
Ji Hye Shim, Gyunggi-do, KR;
Won Shin Lee, Seoul, KR;
Changsung Sean Kim, Gyunggi-do, KR;
Sang Duk Yoo, Gyunggi-do, KR;
Jong Pa Hong, Gyunggi-do, KR;
Ji Hye Shim, Gyunggi-do, KR;
Won Shin Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Seoul, KR;
Abstract
Provided is a chemical vapor deposition apparatus. The apparatus includes a reaction chamber, a gas introduction unit, and a gas exhaust unit. The reaction chamber includes a susceptor on which a wafer is loaded and a reaction furnace in which the wafer is processed by chemical vapor deposition. The gas introduction unit is disposed at an outer wall of the reaction chamber to supply reaction gas from an outside of the reaction furnace to a center portion of the reaction furnace. The gas exhaust unit is disposed at a center portion of the reaction chamber to discharge the reaction gas to an upper or lower outside of the reaction chamber after the reaction gas is used for a reaction in the reaction furnace. Therefore, the gas density inside the chamber can be kept at a substantially uniform state even when process pressure is increased for growing a high-temperature deposition layer.