The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Jun. 21, 2006
Seiji Umemoto, Ibaraki, JP;
Kazuhito Kouno, Ibaraki, JP;
Kazumasa Shibata, Tokyo, JP;
Itsuo Takeuchi, Yokohama, JP;
Tokio Sakauchi, Yokohama, JP;
Tohru Ida, Yokohama, JP;
Seiji Umemoto, Ibaraki, JP;
Kazuhito Kouno, Ibaraki, JP;
Kazumasa Shibata, Tokyo, JP;
Itsuo Takeuchi, Yokohama, JP;
Tokio Sakauchi, Yokohama, JP;
Tohru Ida, Yokohama, JP;
Nitto Denko Corporation, Ibaraki-shi, Osaka, JP;
NHK Spring Co., Ltd., Yokohama-shi, Kanagawa, JP;
Abstract
Provided is a multilayer reflector about which a complicated step is not required when the molecular alignment of a retardation film is partially relaxed to form a latent image of authentication information, and about which the latent image is not made visible by the generation of unevenness in the surface. A multilayer reflectorhas a retardation filmin which the phase difference Δndto an observation wavelength λ is set to be m×λ/4−λ/16≦Δnd≦m×λ/4+λ/16 wherein m is a positive odd number, and a metallic reflectorlaminated on the rear face side of this retardation filmwherein an authentication regionwhere predetermined authentication information is beforehand formed in the retardation filmis formed to give a phase difference Δndset to be n×λ/4−λ/8 ≦Δnd≦n×λ/4+λ/8 wherein n is 0 or a positive even number provided that n<m, and further a light diffusing layeris formed on the front face side of the retardation film