The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Dec. 22, 2009
Shin Funada, Pleasanton, CA (US);
Quang Le, San Jose, CA (US);
Thomas L. Leong, San Jose, CA (US);
Jui-lung LI, San Jose, CA (US);
Chang-man Park, Mountain View, CA (US);
Ning Shi, San Jose, CA (US);
Hicham M. Sougrati, Burlingame, CA (US);
Shin Funada, Pleasanton, CA (US);
Quang Le, San Jose, CA (US);
Thomas L. Leong, San Jose, CA (US);
Jui-Lung Li, San Jose, CA (US);
Chang-Man Park, Mountain View, CA (US);
Ning Shi, San Jose, CA (US);
Hicham M. Sougrati, Burlingame, CA (US);
Hitachi Global Storage Technologies Netherlands B.V., Amsterdam, NL;
Abstract
A method for manufacturing a magnetoresistive sensor that results in the sensor having a very flat top magnetic shield. The process involves depositing a plurality of sensor layers and then depositing a thin high density carbon CMP stop layer over the sensor layers and forming a mask over the CMP stop layer. An ion milling is performed to define the sensor. Then a thin insulating layer and magnetic hard bias layer are deposited. A chemical mechanical polishing is performed to remove the mask and a reactive ion etching is performed to remove the remaining carbon CMP stop layer. Because the CMP stop layer is very dense and hard, it can be made very thin. This means that when it is removed by reactive ion etching, there is very little notching over the sensor, thereby allowing the upper shield to be very thin.