The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Mar. 29, 2011
Dimitar V. Dimitrov, Edina, MN (US);
Olle Gunnar Heinonen, Eden Prairie, MN (US);
Yiran Chen, Eden Prairie, MN (US);
Haiwen Xi, Prior Lake, MN (US);
Xiaohua Lou, Bloomington, MN (US);
Dimitar V. Dimitrov, Edina, MN (US);
Olle Gunnar Heinonen, Eden Prairie, MN (US);
Yiran Chen, Eden Prairie, MN (US);
Haiwen Xi, Prior Lake, MN (US);
Xiaohua Lou, Bloomington, MN (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
Non-volatile magnetic random access memory (MRAM) devices that include magnetic flip-flop structures that include a magnetization controlling structure; a first tunnel barrier structure; and a magnetization controllable structure that includes a first polarizing layer; and a first stabilizing layer, wherein the first tunnel barrier structure is between the magnetization controllable structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the first tunnel barrier structure, wherein the magnetic flip-flop device has two stable overall magnetic; configurations a second tunnel barrier structure and a reference layer, wherein the second tunnel barrier structure is between the magnetic flip-flop device and the reference layer.