The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8295070 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 23, 2012

Filed:

Dec. 15, 2010
Applicant:

Gou Fukano, Kawasaki, JP;

Inventor:

Gou Fukano, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, a resistance change memory includes a stacked layer structure stacked on a semiconductor substrate in order of a first conductive line, a first variable resistance element, a second conductive line, a second variable resistance element, . . . a n-th conductive line, a n-th variable resistance element and a (n+1)-th conductive line, where n is a natural number equal to or larger than 2, and a first to a n-th drivers which drives the first to the (n+1)-th conductive lines. The odd-numbered conductive lines are extends in a first direction along a surface of the semiconductor substrate. The even-numbered conductive lines are extends in a second direction along the surface of the semiconductor substrate. Sizes of the first to (n+1)-th drivers become large gradually from the first driver to the (n+1)-th driver.


Find Patent Forward Citations

Fukano, Gou. (2012). Resistance change memory (U.S. Patent No. 8295070). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8295070

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