The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Aug. 12, 2010
Dong Min Kang, Daejeon, KR;
Hong Gu Ji, Daejeon, KR;
Hokyun Ahn, Daejeon, KR;
Jong-won Lim, Daejeon, KR;
Woojin Chang, Daejeon, KR;
Sang-heung Lee, Daejeon, KR;
Dong-young Kim, Daejeon, KR;
Hae Cheon Kim, Daejeon, KR;
Dong Min Kang, Daejeon, KR;
Hong Gu Ji, Daejeon, KR;
Hokyun Ahn, Daejeon, KR;
Jong-Won Lim, Daejeon, KR;
Woojin Chang, Daejeon, KR;
Sang-Heung Lee, Daejeon, KR;
Dong-Young Kim, Daejeon, KR;
Hae Cheon Kim, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided is a power amplifier including: a depletion mode high electron mobility transistor (D-mode HEMT) configured to amplify a signal inputted to a gate terminal and output the amplified signal through a drain terminal; an input matching circuit configured to serially ground the gate terminal; and a DC bias circuit connected between the drain terminal and a ground. Through the foregoing configuration, the HEMT may be biased only by a single DC bias circuit without any biasing means to provide a negative voltage. Also, superior matching characteristic may be provided in various operation frequency bands through a shunt inductor and a choke inductor.