The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Jan. 11, 2010
Hyun-su Kim, Gyeonggi-Do, KR;
Kwang-jin Moon, Gyeonggi-Do, KR;
Sang-woo Lee, Seoul, KR;
Eun-ok Lee, Incheon, KR;
Ho-ki Lee, Gyeonggi-Do, KR;
Hyun-Su Kim, Gyeonggi-Do, KR;
Kwang-Jin Moon, Gyeonggi-Do, KR;
Sang-Woo Lee, Seoul, KR;
Eun-Ok Lee, Incheon, KR;
Ho-Ki Lee, Gyeonggi-Do, KR;
Samsung Electronics Co. Ltd., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
Contacts having different characteristics may be created by forming a first silicide layer over a first device region of a substrate, and then forming a second silicide layer over a second device region while simultaneously further forming the first silicide layer. A first contact hole may be formed in a dielectric layer over a first device region of a substrate. A silicide layer may then be formed in the first contact hole. A second contact hole may be formed after the first contact hole and silicide layer is formed. A second silicidation may then be performed in the first and second contact holes.