The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Jan. 15, 2008
Jong-hyeob Baek, Daejeon, KR;
Sang-mook Kim, Gwangju, KR;
Sang-hern Lee, Busan, KR;
Seung-jae Lee, Jeollabuk-do, KR;
Jung-geun Jhin, Seoul, KR;
Yoon-seok Kim, Seoul, KR;
Hong-seo Yom, Seoul, KR;
Young-moon Yu, Daejeon, KR;
Jong-Hyeob Baek, Daejeon, KR;
Sang-Mook Kim, Gwangju, KR;
Sang-Hern Lee, Busan, KR;
Seung-Jae Lee, Jeollabuk-do, KR;
Jung-Geun Jhin, Seoul, KR;
Yoon-Seok Kim, Seoul, KR;
Hong-Seo Yom, Seoul, KR;
Young-Moon Yu, Daejeon, KR;
Abstract
The present invention relates to a light emitting diode with high electrostatic discharge and a fabrication method thereof, and more specifically to a light emitting diode comprising a first electrode layer provided over a upper surface of a first semiconductor layer and a upper surface of a second semiconductor layer; a transparent electrode layer formed on the upper surface of the second semiconductor layer, spaced from the first electrode layer; and a second electrode layer provided on a upper surface of the transparent electrode layer. With the present invention, there is provided a light emitting diode element with resistance against electrostatic discharge and with high reliability being strong against electrical impact, by selecting a structure arranging a form of an electrode differently from a conventional electrode.