The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Jan. 04, 2010
Faquir Chand Jain, Storrs, CT (US);
Evan Heller, Glastonbury, CT (US);
Faquir Chand Jain, Storrs, CT (US);
Evan Heller, Glastonbury, CT (US);
Other;
Abstract
A field-effect transistor is provided and includes source, gate and drain regions, where the gate region controls charge carrier location in the transport channel, the transport channel includes a asymmetric coupled quantum well layer, the asymmetric quantum well layer includes at least two quantum wells separated by a barrier layer having a greater energy gap than the wells, the transport channel is connected to the source region at one end, and the drain regions at the other, the drain regions include at least two contacts electrically isolated from each other, the contacts are connected to at least one quantum well. The drain may include two regions that are configured to form the asymmetric coupled well transport channel. In an embodiment, two sources and two drains are also envisioned.