The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8294136 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 23, 2012

Filed:

Mar. 20, 2009
Applicants:

Shingo Totani, Aichi-ken, JP;

Yukitaka Hasegawa, Aichi-ken, JP;

Inventors:

Shingo Totani, Aichi-ken, JP;

Yukitaka Hasegawa, Aichi-ken, JP;

Assignee:

Toyoda Gosei Co., Ltd., Aichi-Ken, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract

The purpose of the present invention is to obtain a nitride-based semiconductor light emitting element capable of improving light emission efficiency by reducing sheet resistance and a forward voltage of a translucent electrode including indium cerium oxide. The nitride-based semiconductor light emitting element of the present invention is has a translucent electrode including indium cerium oxide; and cerium oxide is contained in a ratio of 10 to 20 wt % with respect to a whole of the indium cerium oxide.


Find Patent Forward Citations

Totani, Shingo. (2012). Nitride-based semiconductor light emitting element (U.S. Patent No. 8294136). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8294136

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