The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Mar. 30, 2010
Feng Miao, Mountain View, CA (US);
Joshua Yang, Palo Alto, CA (US);
Wei Wu, Palo Alto, CA (US);
Shih-yuan Wang, Palo Alto, CA (US);
R. Stanley Williams, Portola Valley, CA (US);
Feng Miao, Mountain View, CA (US);
Joshua Yang, Palo Alto, CA (US);
Wei Wu, Palo Alto, CA (US);
Shih-Yuan Wang, Palo Alto, CA (US);
R. Stanley Williams, Portola Valley, CA (US);
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Abstract
A graphene memristor includes a first electrode, a second electrode electrically coupled to the first electrode, an active region interspersed between the first and second electrodes, a defective graphene structure that modulates a barrier height to migration of ions through the active region, fast diffusing ions that migrate under the influence an electric field to change a state of the graphene memristor, and a source that generates the electric field.