The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2012

Filed:

Mar. 26, 2008
Applicants:

Hiromoto Ohno, Minato-ku, JP;

Toshio Ohi, Minato-ku, JP;

Nobutoshi Sasaki, Minato-ku, JP;

Kiyoshi Nomura, Minato-ku, JP;

Inventors:

Hiromoto Ohno, Minato-ku, JP;

Toshio Ohi, Minato-ku, JP;

Nobutoshi Sasaki, Minato-ku, JP;

Kiyoshi Nomura, Minato-ku, JP;

Assignee:

Showa Denko K.K., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C07C 17/00 (2006.01); C07C 17/38 (2006.01);
U.S. Cl.
CPC ...
Abstract

The production process for 1,2,3,4-tetrachlorohexafluorobutane of the present invention is characterized in that 1,2,3,4-tetrachlorobutane is reacted with fluorine in the presence of a solvent containing hydrogen fluoride. The 1,2,3,4-tetrachlorobutane may be obtained by chlorination of 3,4-dichlorobutene-1. Further, the present invention provides as well a process of refining 1,2,3,4-tetrachlorohexafluorobutane obtained in the manner described above. According to the present invention, 1,2,3,4-tetrachlorohexafluorobutane which is useful, for example, as a synthetic raw material for hexafluoro-1,3-butadiene used as an etching gas for semiconductors can industrially efficiently be produced by using 1,2,3,4-tetrachlorobutane which is a by-product of chloroprene and which has so far been disposed.


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