The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2012

Filed:

Feb. 17, 2010
Applicants:

Eric Shero, Phoenix, AZ (US);

Mohith Verghese, Phoenix, AZ (US);

Anthony Muscat, Tucson, AZ (US);

Shawn Miller, Tucson, AZ (US);

Inventors:

Eric Shero, Phoenix, AZ (US);

Mohith Verghese, Phoenix, AZ (US);

Anthony Muscat, Tucson, AZ (US);

Shawn Miller, Tucson, AZ (US);

Assignee:

ASM America, Inc., Phoenix, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods and structures relating to the formation of mixed SAMs for preventing undesirable growth or nucleation on exposed surfaces inside a reactor are described. A mixed SAM can be formed on surfaces for which nucleation is not desired by introducing a first SAM precursor having molecules of a first length and a second SAM precursor having molecules of a second length shorter than the first. Examples of exposed surfaces for which a mixed SAM can be provided over include reactor surfaces and select surfaces of integrated circuit structures, such as insulator and dielectric layers.


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