The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Dec. 21, 2009
Ruben Lieten, Zonhoven, BE;
Ruben Lieten, Zonhoven, BE;
IMEC, Leuven, BE;
Abstract
The described system relates to a method for forming a layer of a mono-crystalline semiconductor material on a substrate, comprising providing a substrate, growing epitaxially a template comprising at least one monolayer of a semiconductor material on the substrate, thereafter depositing an amorphous layer of the semiconductor material on the template; performing a thermal treatment or a laser anneal, thereby converting substantially all of the amorphous layer of the semiconductor material into a mono-crystalline layer of the semiconductor material. According to an embodiment, the semiconductor material is Ge and the substrate is a Si substrate. The template is preferably a few monolayers thick.