The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Aug. 31, 2009
Dongchan Kim, Anyang-si, KR;
Sungkweon Baek, Suwon-si, KR;
Dongchan Kim, Anyang-si, KR;
Sungkweon Baek, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-do, KR;
Abstract
A method of forming a semiconductor device includes forming a trench on a semiconductor substrate to define an active region, forming a radical oxide layer on a sidewall and a bottom surface of the trench, and forming a nitride layer on the radical oxide layer. The conduction band offset of the radical oxide layer is greater than the conduction band offset of a thermal oxide layer having the same thickness as the radical oxide layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile