The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Jun. 29, 2009
Yong Jun Lee, Incheon, KR;
Yong Jun Lee, Incheon, KR;
Dongbu HiTek Co., Ltd., Seoul, KR;
Abstract
A method for manufacturing a lateral double diffused metal oxide semiconductor (LDMOS) device includes forming an oxide layer on a semiconductor substrate, forming first and second trenches by partially etching the oxide layer and the semiconductor substrate, forming a small trench overlapping with the second trench so that the second trench has a stepped structure, and depositing one or more dielectric layers so that the first trench forms a device isolation layer defining a semiconductor device region and the second trench having a stepped structure forms a drain extension device isolation layer. The breakdown voltage of the LDMOS device may be improved while reducing the on-resistance, thereby improving the operational reliability of the device.