The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Mar. 25, 2009
Junichi Tanabe, Toyama, JP;
Junichi Tanabe, Toyama, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
A semiconductor device manufacturing method including: (a) loading into a chamber a substrate having at least an exposed silicon surface and an exposed surface of silicon oxide film or silicon nitride film on a substrate surface; (b) simultaneously supplying at least a first process gas containing silicon and a second process gas for etching into the chamber when the substrate inside the chamber is heated to a predetermined temperature; and (c) supplying into the chamber a third process gas having an etchability higher than the second process gas etchability. Steps (b) and (c) are performed at least once to selectively grow an epitaxial film on the exposed silicon surface of the substrate surface. A temperature of the substrate is maintained at the predetermined temperature from (b) to (c), and the temperature of the substrate is temporarily elevated above the predetermined temperature and then returned to the predetermined temperature in (c).